Spin-dependent transport characteristics of nanostructures based on armchair arsenene nanoribbons
Yang Kai-Wei1, Li Ming-Jun1, †, Zhang Xiao-Jiao2, Li Xin-Mei1, Gao Yong-Li1, 3, Long Meng-Qiu1, ‡
       

(color online) (a), (b) Spin-filtering efficiencies for M3 device at the negative and positive bias, respectively. (c), (d) Rectifying ratios for the spin-up and spin-down currents of M3 device in a long scale. Arrows ↑ and ↓ denote the spin-up and spin-down states. (e), (f) Plots of magnetoresistance versus the applied bias for 10-aAsNR device in a long scale under FM state in the negative and positive bias ranges, respectively.