Performance of dual-band short- or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices

Sun Yao-yao^{1, 2, 3}, Lv Yue-xi^{1, 2, 3}, Han Xi^{1, 2, 3}, Guo Chun-yan^{1, 2, 3}, Jiang Zhi^{1, 2, 3}, Hao Hong-yue^{1, 2, 3}, Jiang Dong-wei^{1, 2, 3}, Wang Guo-wei^{1, 2, 3}, Xu Ying-qiang^{1, 2, 3}, Niu Zhi-chuan^{1, 2, 3, †}

(color online) Dark current density and differential resistance-area product vs. applied bias of diode at 200 K.