Performance of dual-band short- or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices
Sun Yao-yao
1, 2, 3
, Lv Yue-xi
1, 2, 3
, Han Xi
1, 2, 3
, Guo Chun-yan
1, 2, 3
, Jiang Zhi
1, 2, 3
, Hao Hong-yue
1, 2, 3
, Jiang Dong-wei
1, 2, 3
, Wang Guo-wei
1, 2, 3
, Xu Ying-qiang
1, 2, 3
, Niu Zhi-chuan
1, 2, 3, †
(color online) Schematic of dual-band device.