Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET<sup>

Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

Yan Wei-Wei^{1, 2}, Gao Lin-Chun^{1, 2}, Li Xiao-Jing^{1, 2}, Zhao Fa-Zhan^{1, 2}, Zeng Chuan-Bin^{1, 2, †}, Luo Jia-Jun^{1, 2}, Han Zheng-Sheng^{1, 2}

(color online) Distributions of electrostatic potential at (a) 0 ps, (b) 1 ps, (c) 3 ps, and (d) 10 ps when the body-drain junction (location #3) was hit.