Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET<sup>

Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

Yan Wei-Wei^{1, 2}, Gao Lin-Chun^{1, 2}, Li Xiao-Jing^{1, 2}, Zhao Fa-Zhan^{1, 2}, Zeng Chuan-Bin^{1, 2, †}, Luo Jia-Jun^{1, 2}, Han Zheng-Sheng^{1, 2}

(color online) Layouts of (a) device 1 and (b) device 2; the laser hit locations are marked in layouts, and the markers do not represent the actual laser spot size (the body contacts are not shown).