Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET
Yan Wei-Wei1, 2, Gao Lin-Chun1, 2, Li Xiao-Jing1, 2, Zhao Fa-Zhan1, 2, Zeng Chuan-Bin1, 2, †, Luo Jia-Jun1, 2, Han Zheng-Sheng1, 2
       

(color online) Physical structure of PD-SOI MOSFETs.