Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET
Yan Wei-Wei
1, 2
, Gao Lin-Chun
1, 2
, Li Xiao-Jing
1, 2
, Zhao Fa-Zhan
1, 2
, Zeng Chuan-Bin
1, 2, †
, Luo Jia-Jun
1, 2
, Han Zheng-Sheng
1, 2
(color online) Physical structure of PD-SOI MOSFETs.