Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET<sup>

Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

Yan Wei-Wei^{1, 2}, Gao Lin-Chun^{1, 2}, Li Xiao-Jing^{1, 2}, Zhao Fa-Zhan^{1, 2}, Zeng Chuan-Bin^{1, 2, †}, Luo Jia-Jun^{1, 2}, Han Zheng-Sheng^{1, 2}

(color online) Distributions of electrostatic potential at 3 ps when (a) the source region (#1) and (b) drain region (#5) was hit (legend is the same as Fig. 9).