Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs<sup>

Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs

Li Jianfei^{1, 2}, Lv Yuanjie², Li Changfu¹, Ji Ziwu^{1, †}, Pang Zhiyong¹, Xu Xiangang³, Xu Mingsheng⁴

(a) I_DS–V_DS curves measured at V_GS varying from 0 to −7 V in −0.5 V steps for sample B. (b) Off-state I_DS as a function of V_DS for the three samples (A, B, and C) at V_GS = −7 V and T = 300 K.