Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs<sup>

Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs

Li Jianfei^{1, 2}, Lv Yuanjie², Li Changfu¹, Ji Ziwu^{1, †}, Pang Zhiyong¹, Xu Xiangang³, Xu Mingsheng⁴

Temperature dependencies of the sheet carrier density and Hall mobility of the three AlGaN/GaN HEMTs.