Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs<sup>

Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs

Li Jianfei^{1, 2}, Lv Yuanjie², Li Changfu¹, Ji Ziwu^{1, †}, Pang Zhiyong¹, Xu Xiangang³, Xu Mingsheng⁴

(a) PL spectra of three AlGaN/GaN HEMTs at P = 0.02 mW and T = 300 K. All PL spectra are normalized to the near-band edge emission. (b) Temperature-dependent PL spectra in the vicinity of the IR emission peak for sample B.