Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs
Li Jianfei
1, 2
, Lv Yuanjie
2
, Li Changfu
1
, Ji Ziwu
1, †
, Pang Zhiyong
1
, Xu Xiangang
3
, Xu Mingsheng
4
(a) Schematic diagram and (b) optical microscopy image of AlGaN/GaN HEMT.