Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing
Meng Xiao-Ran1, 2, Ping Yun-Xia1, †, Yu Wen-Jie2, Xue Zhong-Ying2, Wei Xing2, Zhang Miao2, Di Zeng-Feng2, Zhang Bo2, ‡, Zhao Qing-Tai3
       

STEM images of NSG layers formed with 3 nm Al at different annealing temperatures: (a) 500 °C, (b) 550 °C, (c) 700 °C.