Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing
Meng Xiao-Ran1, 2, Ping Yun-Xia1, †, Yu Wen-Jie2, Xue Zhong-Ying2, Wei Xing2, Zhang Miao2, Di Zeng-Feng2, Zhang Bo2, ‡, Zhao Qing-Tai3
       

(color online) Schematic diagrams of Ni/Al/SiGe systems and the corresponding RBS measurements: (a), (b) 1 nm Al; (c), (d) 3 nm Al.