Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

Sun Ya-Bin, Li Xiao-Jin^†, Zhang Jin-Zhong^‡, Shi Yan-Ling

Equivalent distributed network of intrinsic transistor for solving Y₁₁ and Y₁₂, where the emitter terminal is connected to ground and the base terminal B₁ is the applied voltage V₁.