Performance enhancement of CMOS terahertz detector by drain current<sup>

Performance enhancement of CMOS terahertz detector by drain current

Zhang Xingxing, Ji Xiaoli^†, Liao Yiming, Peng Jingyu, Zhu Chenxin, Yan Feng

(color online) Bias-current dependence of R_v for CMOS detector under 680-GHz radiation with a 1 kHz electronic chopper. The solid line represents the theoretical calculation using Eq. (6) for the gate bias V_gs = 0.49 V. The arrow in the figure shows the value of the current that corresponds to the saturated R_v.