Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide
Hou Cai-Xia1, 2, Zheng Xin-He1, †, Jia Rui2, ‡, Tao Ke2, Liu San-Jie1, Jiang Shuai2, Zhang Peng-Fei2, Sun Heng-Chao2, Li Yong-Tao2
       

(color online) Microscope images of n-type Cz Si samples passivated with 135 ALD cycles (~ 15 nm) of Al2O3 annealed for 15 min at (a) 425 °C, (b) 450 °C, (c) 475 °C, and (d) 500 °C, respectively, then capped by 70 nm SiNx.