Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide
Hou Cai-Xia1, 2, Zheng Xin-He1, †, Jia Rui2, ‡, Tao Ke2, Liu San-Jie1, Jiang Shuai2, Zhang Peng-Fei2, Sun Heng-Chao2, Li Yong-Tao2
       

(color online) Maximum effective minority carrier lifetime as a function of (a) pressure, (b) deposition temperature, and (c) Al2O3 thickness.