Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide
Hou Cai-Xia1, 2, Zheng Xin-He1, †, Jia Rui2, ‡, Tao Ke2, Liu San-Jie1, Jiang Shuai2, Zhang Peng-Fei2, Sun Heng-Chao2, Li Yong-Tao2
       

(color online) (a) Schematic of thermal ALD cycles. Al(CH3)3 and H2O dosing times in this study are in a ms range and the purge is of the order of seconds, N2 was used as purge gas; (b) n-type c-Si sample with symmetrical passivation layers.