Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures<sup>

Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures

Feng Shenyan, Zhang Qiaoxuan, Yang Jie, Lei Ming^†, Quhe Ruge^‡

(color online) Spatial resolved LDOS of in-plane heterostructures without doping. The Fermi level is set to zero.