Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures<sup>

Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures

Feng Shenyan, Zhang Qiaoxuan, Yang Jie, Lei Ming^†, Quhe Ruge^‡

(color online) (a) Transmission spectra and spatial resolved LDOS of the in-plane β/δ p–i–n junction current peak valley (V_bias = 1.125–1.25 V), respectively. The black dash line represents the bias window. The lengths of the intrinsic regions are L₁ = 0 Å in panel (b) and L₂ = 11 Å in panel (c), respectively. The Fermi levels of the left and right electrodes are denoted by E_f,L and E_f,R, respectively.