Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures<sup>

Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures

Feng Shenyan, Zhang Qiaoxuan, Yang Jie, Lei Ming^†, Quhe Ruge^‡

(color online) Transmission eigenstate of the current peak and current valley states of the (a) in-plane and (b) vertical heterostructures. Yellow balls: δ-P; blue balls: β-P.