Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures<sup>

Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures

Feng Shenyan, Zhang Qiaoxuan, Yang Jie, Lei Ming^†, Quhe Ruge^‡

(color online) Spatial resolved LDOS and transmission spectra of the in-plane β/δ p–i–n junction at (a)–(d) current peak (V_bias = 0.25–0.30 V) and (e)–(h) valley (V_bias = 1.125 V), respectively. The lengths of the intrinsic regions are L₁ in panels (a) and (e), L₂ in panels (b) and (f), and L₃ in panels (c) and (g), respectively. The Fermi levels of the left and right electrodes are denoted by E_f,L and E_f,R, respectively.