Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures<sup>

Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures

Feng Shenyan, Zhang Qiaoxuan, Yang Jie, Lei Ming^†, Quhe Ruge^‡

(color online) (a1) and (a2) Two-probe models of the p–i–n junction composed of δ-P and β-P based on in-plane and vertically stacked heterostructures. The unit cells in gray and green shadows are heavily p-type and n-type doped, respectively. In these cases, the length of the intrinsic region is L₁ = 0 Å, L₂ = 11 Å, and L₃ = 19 Å. Yellow balls: δ-P; blue balls: β-P. (b1) and (b2) The I–V_bias curves with different lengths of intrinsic region of in-plane heterostructures and vertically stacked heterostructures.