Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures<sup>

Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures

Feng Shenyan, Zhang Qiaoxuan, Yang Jie, Lei Ming^†, Quhe Ruge^‡

(color online) Heterostructures based on (a) in-plane and (b) vertical heterostructures. The source and drain are semi-infinite δ-P and β-P represented by blue arrows, respectively. The channel is composed of δ-P and β-P in-plane and vertical heterostructures, respectively.