Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants<sup>

Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants

Li Chang-Sheng^†, Ma Lei, Guo Jie-Rong

(color online) The electron density (in units of m⁻³) of a cross section with four discrete dopants added in the source and drain regions as shown in Fig. 1(c) at V_G = 0.5 V and V_DS = 0.1 V.