Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants<sup>

Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants

Li Chang-Sheng^†, Ma Lei, Guo Jie-Rong

(color online) The electron density (in units of m⁻³) of a middle cross section for (a) continuous doping, and (b) four discrete dopants added in the source and drain regions as shown in Fig. 1(c). Here V_G = 0.2 V and V_DS = 0.1 V.