Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants<sup>

Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants

Li Chang-Sheng^†, Ma Lei, Guo Jie-Rong

(color online) (a) Electron mobility (in units of cm²/(V⋅s)), (b) conductance (in units of Ω⁻¹), and (c) current (in units of A) versus the varied doping position of the single dopant added in the central line of the nanowire transistor.