Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants<sup>

Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants

Li Chang-Sheng^†, Ma Lei, Guo Jie-Rong

(color online) Transmission versus energy at V_G = 0.5 V for nanowire MOSFET with intrinsic (small red dot) and doped (big blue square) channel region. Here V_DS = 0.1 V.