Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Liu Yan¹, Lin Zhao-Jun^{1, †}, Lv Yuan-Jie², Cui Peng¹, Fu Chen¹, Han Ruilong¹, Huo Yu¹, Yang Ming¹

(color online) Measured forward I–V characteristics of Ni/Au/AlGaN/AlN/GaN Schottky diode at different temperatures.