Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Liu Yan¹, Lin Zhao-Jun^{1, †}, Lv Yuan-Jie², Cui Peng¹, Fu Chen¹, Han Ruilong¹, Huo Yu¹, Yang Ming¹

(color online) Variations of R_S25 (black trace) and R_S0 (red trace) with temperature. R_S25 represents the value of R_S at I_GS = 25 μA, and R_S0 represents the value of R_S at V_GS = 0 V.