Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors
Liu Yan1, Lin Zhao-Jun1, †, Lv Yuan-Jie2, Cui Peng1, Fu Chen1, Han Ruilong1, Huo Yu1, Yang Ming1
       

(color online) Plot of VGS versus IDS at different temperatures with IGS = 25 μA for the sample.