Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Liu Yan¹, Lin Zhao-Jun^{1, †}, Lv Yuan-Jie², Cui Peng¹, Fu Chen¹, Han Ruilong¹, Huo Yu¹, Yang Ming¹

Measured output characteristics of the sample at (a) 300 K, (b) 350 K, (c) 400 K, (d) 450 K, and (e) 500 K.