Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Liu Yan¹, Lin Zhao-Jun^{1, †}, Lv Yuan-Jie², Cui Peng¹, Fu Chen¹, Han Ruilong¹, Huo Yu¹, Yang Ming¹

(color online) (a) Measured C–V curves for Al_0.28Ga_0.72N/AlN/GaN HFET at different temperatures. (b) Obtained 2DEG electron sheet density n_2D from C–V measurements for the sample at different temperatures.