Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Liu Yan¹, Lin Zhao-Jun^{1, †}, Lv Yuan-Jie², Cui Peng¹, Fu Chen¹, Han Ruilong¹, Huo Yu¹, Yang Ming¹

(color online) Variations of electric field and piezoelectric polarization of AlGaN barrier layer corresponding to I_GS = 25 μA at different temperatures.