Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin

Zheng Qiwen^{1, 2}, Cui Jiangwei^{1, 2}, Liu Mengxin⁴, Su Dandan^{1, 2, 3}, Zhou Hang^{1, 2, 3}, Ma Teng^{1, 2, 3}, Yu Xuefeng^{1, 2}, Lu Wu^{1, 2}, Guo Qi^{1, 2}, Zhao Fazhan^{4, †}

(color online) Bias dependence of TID induced threshold shift in SRAM cell transistors. (a) Pull-down NMOSFETs. (b) Pull-up PMOSFETs.