Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
Zheng Qiwen1, 2, Cui Jiangwei1, 2, Liu Mengxin4, Su Dandan1, 2, 3, Zhou Hang1, 2, 3, Ma Teng1, 2, 3, Yu Xuefeng1, 2, Lu Wu1, 2, Guo Qi1, 2, Zhao Fazhan4, †
       

(color online) Bias dependence of TID induced threshold shift in SRAM cell transistors. (a) Pull-down NMOSFETs. (b) Pull-up PMOSFETs.