Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
Zheng Qiwen
1, 2
, Cui Jiangwei
1, 2
, Liu Mengxin
4
, Su Dandan
1, 2, 3
, Zhou Hang
1, 2, 3
, Ma Teng
1, 2, 3
, Yu Xuefeng
1, 2
, Lu Wu
1, 2
, Guo Qi
1, 2
, Zhao Fazhan
4, †
(color online) TID effect on
I
ds
–
V
gs
curves of pass gate NMOSFETs. (a) OFF bias. (b) TG bias.