Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
Zheng Qiwen1, 2, Cui Jiangwei1, 2, Liu Mengxin4, Su Dandan1, 2, 3, Zhou Hang1, 2, 3, Ma Teng1, 2, 3, Yu Xuefeng1, 2, Lu Wu1, 2, Guo Qi1, 2, Zhao Fazhan4, †
       

(color online) TID (left y axis) and IdsVgs curves of pull-down NMOSFET (right y axis) pre and post 500 krad(Si) TID irradiation.