Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin

Zheng Qiwen^{1, 2}, Cui Jiangwei^{1, 2}, Liu Mengxin⁴, Su Dandan^{1, 2, 3}, Zhou Hang^{1, 2, 3}, Ma Teng^{1, 2, 3}, Yu Xuefeng^{1, 2}, Lu Wu^{1, 2}, Guo Qi^{1, 2}, Zhao Fazhan^{4, †}

(color online) TID effect on I_ds–V_gs curves of SRAM cell transistors. (a) I_ds–V_gs curves of pull-down NMOSFET pre and post 500 krad(Si) of irradiation under ON bias. (b) I_ds–V_gs curves of pull-up PMOSFET pre and post 500 krad(Si) of irradiation under ON bias.