Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin

Zheng Qiwen^{1, 2}, Cui Jiangwei^{1, 2}, Liu Mengxin⁴, Su Dandan^{1, 2, 3}, Zhou Hang^{1, 2, 3}, Ma Teng^{1, 2, 3}, Yu Xuefeng^{1, 2}, Lu Wu^{1, 2}, Guo Qi^{1, 2}, Zhao Fazhan^{4, †}

(color online) The tested SNM of SRAM cell pre and post TID under different V_dd. (a) Butterfly curves pre and post 500 krad(Si). The black line represents data of pre irradiation and the red line represents data post 500 krad(Si). (b) The extracted SNM change percentage as a function of TID levels under different V_dd.