Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory
Wei Jia-Nan1, †, Guo Hong-Xia1, 2, Zhang Feng-Qi2, Luo Yin-Hong2, Ding Li-Li2, Pan Xiao-Yu2, Zhang Yang1, Liu Yu-Hui1
       

(color online) Comparison between σ0→1 and σ1→0 measured by the pulsed laser facility with two different test patterns at 4 Mrad(Si).