Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory
Wei Jia-Nan1, †, Guo Hong-Xia1, 2, Zhang Feng-Qi2, Luo Yin-Hong2, Ding Li-Li2, Pan Xiao-Yu2, Zhang Yang1, Liu Yu-Hui1
       

Schematic representation of the radiation induced effects on the hysteresis loop of a ferroelectric capacitor: (a) pre-poled to PR (store “0”); (b) pre-poled to −PR (store “1”).