Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory
Wei Jia-Nan1, †, Guo Hong-Xia1, 2, Zhang Feng-Qi2, Luo Yin-Hong2, Ding Li-Li2, Pan Xiao-Yu2, Zhang Yang1, Liu Yu-Hui1
       

Diagram of a 1T-1C ferroelectric memory cell.