Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory
(color online) SEU results measured by the pulsed laser facility with different test patterns: (a) Mrad(Si), (b) 2 Mrad(Si), (c) 4 Mrad(Si).
Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory |
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(color online) SEU results measured by the pulsed laser facility with different test patterns: (a) Mrad(Si), (b) 2 Mrad(Si), (c) 4 Mrad(Si). |
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