Synthesis and magnetotransport properties of Bi2Se3 nanowires
Zhang Kang1, Pan Haiyang2, Wei Zhongxia2, Zhang Minhao1, Song Fengqi2, Wang Xuefeng1, †, Zhang Rong1
       

(color online) Magnetoresistance properties of a single Bi2Se3 nanodevice. (a) SEM image of the Bi2Se3 nanodevice. The magnified SEM image and the AFM height diagram of the nanodevice are shown in the insets. (b) Temperature-dependent resistance curve at zero magnetic field. (c) Magnetoresistance curve in the vertical magnetic field at 2 K. (d) Magnetoresistance curve in the parallel magnetic field at 2 K. The magnetic field positions of resistance oscillation minima versus oscillation index at 2 K and the FFT of the dR/dB in −9 T to 9 T range are shown in the insets.