† Corresponding author. E-mail:
Project supported by the National Basic Resarch Program of China (Grant No. 2014CB339800) and the National Natural Science Foundation of China (Grant No. 11173015).
An experimental double-layer active frequency-selective surface (AFSS) for stealth radome is proposed. The AFSS is a planar structure which is composed of a fixed frequency-selective surface (FSS), a PIN diodes array, and a DC bias network. The AFSS elements incorporating switchable PIN diodes are discussed. By means of controlling the DC bias network, it is possible to switch the frequency response for reflecting and transmitting. Measured and simulated data validate that when the incidence angle varies from 0° to 30° the AFSS produces more than −11.5 dB isolation across 6–18 GHz when forward biased. The insertion loss (IL) is less than 0.5 dB across 10–11 GHz when reverse biased.
The frequency-selective surface (FSS) has been widely employed in stealth radome,[1] it can reduce the radar cross section (RCS) of the antenna greatly out of band.[1,2] A suitable FSS radome can allow the electromagnetic wave to pass in the operating frequency and reject the wave out of band. Varieties of FSSs have been researched,[3–6] but the frequency responses of the FSSs are fixed and mostly lie on the periodic arrays of the FSSs once designed and manufactured.
If the frequency response of the FSS can be varied in response to an applied electrical or optical control signal, then it is possible to realize an active or adaptive FSS (AFSS) structure.[7–16] One approach to achieving AFSS is to incorporate active devices into the FSS structure, resistors,[2] solid-state varactor diodes,[10–12] and MEMS switches[14] are generally used in the AFSS units. However, because of the intrinsic capacitance and inductance effect of the biased network on the AFSS frequency response, these AFSSs usually exhibit a narrow bandwidth frequency response[9] and lack of large beam scanning capability.[7,16]
In this contribution, a novel PIN-tunable, band-pass AFSS radome with an embedded bias network is proposed. Compared with the AFSS reported in the literature,[7–14] the proposed strategy has two main advantages. First, a simple biased strategy is proposed to design a switchable AFSS. Then, the functional band-pass and wide-band RCS reduction are tunable by simply adjusting the bias state of the PIN diodes. Second, wide-band, large-scan angle, and dual-polarized characteristics are achieved by simply designing the transformative square ring slot unit cell.
The frequency response of the proposed AFSS is demonstrated through full-wave EM numerical simulations using CST software.[15] To verify the simulations, a sample using PIN diodes is fabricated and measured in an anechoic chamber, the transmission coefficients and RCS of the sample are measured at different incidence angles for horizontal and vertical polarizations. An excellent transmission property when reverse biased and a wide-band RCS reduction when forward biased are verified by the present theoretical and experimental results.
Figure
The transformative square ring slot elements are arranged on a dielectric substrate in a rectangular lattice, which are selected to provide the wide-band, large-scan angle, and dual-polarized response. The layer of the foam spacer serving as a connection between the two single-layer AFSSs can enlarge the operating bandwidth of the proposed radome. Active control of the AFSS impedance is achieved by loading four high barrier silicon PIN diodes placed orthogonally. The DC bias network incorporating into the AFSS structure is designed as the excitation line to supply a bias voltage to the PIN diodes.
To make the frequency response controllable, the most effective way is to alter the working state of the AFSS. By means of DC bias voltage applied to the PIN diode, the transmission and scatter properties of the switchable AFSS radome can be effectively characterized.
Generally speaking, a PIN diode could be converted into a series and parallel RLC equivalent circuit, such as the scheme described in Ref. [17], Roff, Ron, Con, and Coff are the intrinsic resistances and capacitances of the PIN diode in the on- and off-state, respectively. When the PIN diodes are reverse biased or zero biased, the equivalent resistance Roff is extremely large, the PIN diodes are equivalent to a large resistance shunt capacitor. Under the influence of equivalent capacitance Coff, the resonant frequency of the AFSS can be shifted to lower frequency. In contrast, when forward biased, the equivalent resistance Ron of the PIN diode is smaller, hence the short circuit path is formed between the units and the units are connected together like a metal surface. When the AFSS properly leans, the incidence energy is redirected into off-normal directions by the AFSS, which enables the effective monostatic RCS to reduce in near-normal directions.
To validate the properties of the proposed AFSS, full-wave EM simulation software CST is employed to simulate and optimize the AFSS with 1) miniaturized structure, 2) extended functional band, and 3) maximized transmission coefficients.
In this study, the transmitting frequency of the band-pass AFSS is designed to be 10.5 GHz, and the conductivity of the copper is set as 5.8 × 107 S/m. The equivalent capacitance Coff of the PIN diode is assumed to be 0.1 pF, resistance Roff is assumed to be 30 kΩ, and resistance Ron is assumed to be 10 Ω. The detailed geometrical dimensions of the structure are given in Table
Firstly, to study the effect of the PIN diodes on the FSS frequency response, the proposed AFSS, together with a primary FSS without PIN diodes is simulated using CST software. The simulated results of their transmission coefficients at normal incidence are shown in Fig.
The transmission coefficients at different incidence wave angles for horizontal and vertical polarizations when reverse biased are depicted in Fig.
When forward biased, the transmission coefficients at different incidence wave angles for horizontal and vertical polarizations are shown in Fig.
Based on the design in Fig.
The frequency response was measured across 6–18 GHz by putting the sample on a clamp between two wide-band horn antennas connected to the network analyzer (Agilent N5244A) in the anechoic chamber of Nanjing Research Institute of Electronics Technology. The two wide-band horn antennas were placed about 2 m away from the random surface and had the same height as the AFSS.
To verify the stability of the AFSS radome,[13] we measured the transmission coefficients in vertical and horizontal polarizations for different incident angles. As shown in Fig.
As shown in Fig.
However, due to the small size of the AFSS sample and the wider main lobe beam-width of the testing horn antenna, the experiment result only covers the angle from 0° to 30° when the incident angle exceeds 30°, the frequency resonances deteriorate seriously.
Moreover, to investigate the wide-band scattering performance and stealth characteristic of the AFSS, the monostatic RCS results of the AFSS sample (180 mm × 100 mm) for different frequencies and different incidence wave angles were also measured when forward biased. A metal surface is a perfect electric conductor (PEC), it is often used as a reference in RCS calculations or experiment.[4,18] In this paper, a metal surface with the same size (180 mm × 100 mm) works as the reference in the anechoic chamber as shown in Fig.
As shown in Fig.
To verify this hypothesis, the normalized monostatic RCS of the AFSS with respect to the metal surface at the center frequency (f = 10 GHz) in vertical and horizontal polarizations for different incident angles is shown in Fig.
The above experimental results demonstrate that the monostatic RCS across −45° to 45° direction is reduced greatly by the AFSS from 8 GHz to 12 GHz. It exhibits almost the same RCS reduction characteristics, so the proposed AFSS when forward biased has the perfect stealth characteristic, almost the same as the metal surface, if they properly tilt.
In this paper, a novel AFSS radome using PIN diodes was proposed. Its working state can be switched conveniently by controlling the biased state of the PIN diodes. An AFSS sample was fabricated and measured. The simulated and measured results agree well, which demonstrates that the AFSS can not only guarantee the transmitting characteristic of the AFSS at the 10% operating frequency band for dual polarizations with large incident angle, but also achieve broadband reflection across 6–18 GHz.
The proposed AFSS has the advantages of flexible switchable characteristic and excellent performance at different incident angles and different polarizations. By virtue of these advantages, the proposed AFSS can provide practical applications to airborne stealth radome which can effectively reduce the RCS of the antenna. However, the bias network has a little effect on the frequency response of the AFSS; research is being carried out on an optical control network, it will eliminate the influence of the bias network drastically, and the operating mechanisms will be studied further.
[1] | |
[2] | |
[3] | |
[4] | |
[5] | |
[6] | |
[7] | |
[8] | |
[9] | |
[10] | |
[11] | |
[12] | |
[13] | |
[14] | |
[15] | |
[16] | |
[17] | |
[18] |