Effect of grain boundary structures on the behavior of He defects in Ni: An atomistic study
Gong H F1, 2, 3, 4, †, Yan Y1, Zhang X S1, Lv W4, Liu T1, Ren Q S1
       

(color online) The binding energy of the N-th He defect to the remaining defect as a function of the number of He atoms in the defect.