Effect of grain boundary structures on the behavior of He defects in Ni: An atomistic study
Gong H F1, 2, 3, 4, †, Yan Y1, Zhang X S1, Lv W4, Liu T1, Ren Q S1
       

(color online) The binding energy of an interstitial He atom to the GB plane as a function of the initial distance of the He atom to the GB plane. The shaded area indicates the main interaction region.