A generalized model of TiO<sub><i>x</i></sub>-based memristive devices and its application for image processing

A generalized model of TiO_x-based memristive devices and its application for image processing

Zhang Jiangwei^{1, 2, 3}, Tang Zhensen^{1, 2}, Xu Nuo^{1, 2, 4}, Wang Yao², Sun Honghui^{1, 2}, Wang Zhiyuan^{1, 2}, Fang Liang^{1, 2, †}

(color online) A comparison of LTP/LTD responses between simulation results and experimental data of HfO_x device under trains of identical rectangular spikes described in Ref. [38]. Potentiation: voltage amplitude 0.55 V, time width , rise and fall times 100 ns. Depression: voltage amplitude −0.7 V, time width , rise and fall times 100 ns.