A generalized model of TiO<sub><i>x</i></sub>-based memristive devices and its application for image processing

A generalized model of TiO_x-based memristive devices and its application for image processing

Zhang Jiangwei^{1, 2, 3}, Tang Zhensen^{1, 2}, Xu Nuo^{1, 2, 4}, Wang Yao², Sun Honghui^{1, 2}, Wang Zhiyuan^{1, 2}, Fang Liang^{1, 2, †}

(color online) Evaluation of the proposed model. (a) I–V curves at different sweep rates of sweep voltages. (b) SET time versus applied voltage amplitude. (c) I–V curves of anti-serial connection of two devices at different sweep rate of sweep voltages. (d) I–V curves of anti-serial connection of two devices with different serial resistances.