A generalized model of TiOx-based memristive devices and its application for image processing
Zhang Jiangwei1, 2, 3, Tang Zhensen1, 2, Xu Nuo1, 2, 4, Wang Yao2, Sun Honghui1, 2, Wang Zhiyuan1, 2, Fang Liang1, 2, †
       

(color online) Reversible and nonvolatile switching of Au/Ti/TiO2/Au devices. The upper inset shows a schematic diagram of the crossbar devices with an Au bottom electrode (BE, 25 nm), a TiO2 thin film (40 nm), an adhesion Ti layer (5 nm) and an Au top electrode (TE, 35 nm). The red curves represent 50 experimental switching loops, which show a high level of repeatability. For each interval, the device stays in low resistance state (LRS) at initially and switches to high resistance state(HRS) at . Then, it switches back to LRS at and then finally returns to the initial LRS at . It is obvious that before the end of , the curve shows the negative differential resistance (NDR) behavior.